MRF232
NPN Silicon RF power transistor
Type Designator: MRF232
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 55 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -